Journal Papers

1. J. Hicks, A. Behnam, and A. Ural, “A computational study of tunneling-percolation electrical transport in graphene-based nanocomposites,” accepted for publication in Applied Physics Letters.
2. Y. Zhou, J. L. Johnson, A. Ural, and H. Xie, "Localized growth of carbon nanotubes on CMOS substrate at room temperature using maskless post-CMOS processing," accepted for publication in  IEEE Transactions on Nanotechnology.
   
3. J. S. Wright, W. Lim, D. P. Norton, S. J. Pearton, F. Ren, J. L. Johnson, and A. Ural, “Nitride and oxide semiconductor nanostructured hydrogen gas sensors,” accepted for publication in Semiconductor Science and Technology.
4. J. Hicks, A. Behnam, and A. Ural, “Resistivity in percolation networks of one dimensional elements with a length distribution,” Physical Review E 79, 012102 (2009).  PDF
5. Y. Choi, J. L. Johnson, and A. Ural, “Patterned growth of silicon oxide nanowires from iron ion implanted SiO₂ substrates,” Nanotechnology 20, 135307 (2009). (cover feature) PDF
6. J. L. Johnson, Y. Choi, A. Ural, W. Lim, J. S. Wright, B. P. Gila, F. Ren, and S. J. Pearton, “Growth and characterization of GaN nanowires for hydrogen sensors,” Journal of Electronic Materials 38, 490 (2009). PDF
7. J. S. Wright, W. Lim, B. P. Gila, S. J. Pearton, J. L. Johnson, A. Ural, and F. Ren, “Hydrogen sensing with Pt-functionalized GaN nanowires,” Sensors and Actuators B: Chemical 140, 196 (2009).  PDF
8. A. Behnam, G. Bosman, and A. Ural, “Percolation scaling of 1/f noise in single-walled carbon nanotube films,” Physical Review B 78, 085431 (2008). PDF
9. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and A. Ural, “Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures,” Applied Physics Letters 92, 243116 (2008). PDF
10. W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, A. Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” Applied Physics Letters 93, 072109 (2008).  PDF
11. J. L. Johnson, Y. Choi, and A. Ural, “GaN nanowire and Ga₂O₃ nanowire and nanoribbon growth from ion implanted iron catalyst,” Journal of Vacuum Science and Technology B 26, 1841 (2008).  PDF
12. A. Behnam, J. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film–GaAs Schottky contacts,” Journal of Applied Physics 103, 114315 (2008).  PDF
13. A. Behnam, J. Guo, and A. Ural, “Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films,” Journal of Applied Physics 102, 044313 (2007).  PDF
14. A. Behnam and A. Ural, “Computational study of geometry-dependent resistivity scaling in single-walled carbon nanotube films,” Physical Review B 75, 125432 (2007).  PDF
15. A. Behnam, Y. Choi, L. Noriega, Z. Wu, I. Kravchenko, A. G. Rinzler, and A. Ural, “Nanolithographic patterning of transparent, conductive single-walled carbon nanotube films by inductively coupled plasma reactive ion etching,” Journal of Vacuum Science and Technology B 25, 348 (2007).  PDF
16. Y. Choi, J. Sippel-Oakley, and A. Ural, “Single-walled carbon nanotube growth from ion implanted Fe catalyst,” Applied Physics Letters 89, 153130 (2006).  PDF
17. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and A. Ural, “Micromachined silicon transmission electron microscopy grids for direct characterization of as-grown nanotubes,” Nanotechnology 17, 4635 (2006).  PDF
18. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and A. Ural, “Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions,” Applied Physics Letters 89, 093107 (2006).  PDF
19. A. Nojeh, A. Ural, R. F. Pease, and H. Dai, "Electric-field-directed growth of carbon nanotubes in two dimensions," Journal of Vacuum Science & Technology B 22, 3421 (2004).  PDF
20. Y. Li, D. Mann, M. Rolandi, W. Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai, “Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method,” Nano Letters 4, 317 (2004).  PDF
21. A. Ural, Y. Li, and H. Dai, “Electric-field-aligned growth of single-walled carbon nanotubes on surfaces,” Applied Physics Letters 81, 3464 (2002). PDF
22. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, “High k dielectrics for advanced carbon nanotube transistors and logic,” Nature Materials 1, 241 (2002).  PDF
23. A. Javey, Q. Wang, A. Ural, Y. Li, and H. Dai, “Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators,” Nano Letters 2, 929 (2002).  PDF
24. A. Ural, P. B. Griffin, and J. D. Plummer, “Atomic-scale diffusion mechanisms via interme­diate species,” Physical Review B 65, 134303 (2002).  PDF
25. A. Ural, P. B. Griffin, and J. D. Plummer, “Silicon self-diffusion under extrinsic conditions,” Applied Physics Letters 79, 4328 (2001).  PDF
26. A. Ural, P. B. Griffin, and J. D. Plummer, “Ural, Griffin, and Plummer reply,” Physical Review Letters 85, 4836 (2000).  PDF
27. A. Ural, P. B. Griffin, and J. D. Plummer, “Self-diffusion in silicon: Similarity between the properties of native point defects,” Physical Review Letters 83, 3454 (1999).  PDF
28. A. Ural, P. B. Griffin, and J. D. Plummer, “Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon,” Journal of Applied Physics 85, 6440 (1999).  PDF
29. A. Ural, P. B. Griffin, and J. D. Plummer, “Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,” Physica B 273, 512 (1999).  PDF
30. A. Ural, P. B. Griffin, and J. D. Plummer, “Experimental evidence for a dual vacancy-inter­stitial mechanism of self-diffusion in silicon,” Applied Physics Letters 73, 1706 (1998).  PDF

Conference Papers and Presentations

1. J. L. Johnson, A. Behnam, and A. Ural, “Electrical and materials characterization of large area, transparent, conductive graphene film networks and their potential for gas sensing,” accepted for presentation at the Materials Research Society (MRS) Fall Meeting 2009, Boston, MA (2009).
2. Y. Zhou, J. Johnson, A. Ural, and H. Xie "Carbon nanotube-CMOS integration based on a maskless post-CMOS process,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL (2009).
3. J. L. Johnson, A. Behnam, J. S. Wright, S. J. Pearton, and A. Ural, “Large area, transparent, conductive graphene nanoribbon network gas sensors,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL (2009).
   
4. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and A. Ural, “Electrical characterization of the nanoscale interface between single-walled carbon nanotube films and silicon substrates,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL (2009).
   
5. A. Ural, “Electronic properties of carbon nanotube films and nanotube film-semiconductor junctions,” presented at the 215^th Electrochemical Society (ECS) Meeting, San Francisco, CA (2009). (invited talk)
6. A. Behnam, G. Bosman, and A. Ural, “Characterization and modeling of low frequency Noise in single-walled carbon nanotube film-based devices,” presented at the 2009 Device Research Conference (DRC), University Park, PA (2009).
7. A. Behnam, G. Bosman, and A. Ural, “1/f noise in single-walled carbon nanotube films,” Proceedings of SPIE 7204, 72040J (2009).
8. A. Behnam, A. Ural, and G. Bosman, “Modeling and measurements of low frequency noise in single-walled carbon nanotube films with bulk and percolation configurations,” AIP Conference Proceedings 1129, 79 (2009). (invited talk)
9. E. Cicek, J. L. Johnson, A. Ural, and G. Bosman, “Defect noise spectroscopy results for GaN nanowires,” AIP Conference Proceedings 1129, 101 (2009). 
10. J. L. Johnson, Y. Choi, and A. Ural, “Ion implanted SiO₂ substrates for nucleating silicon oxide nanowire growth,” presented at the Materials Research Society (MRS) Spring Meeting 2009, San Francisco, CA (2009).
11. J. Hicks, A. Behnam, and A. Ural, “A computational study of electrical transport in graphene-based films and composites,” presented at the American Physical Society (APS) March Meeting 2009, Pittsburgh, PA (2009).
12. A. Behnam, G. Bosman, and A. Ural, “Experimental and computational study of 1/f noise scaling in single-walled carbon nanotube percolation films,” presented at the American Physical Society (APS) March Meeting 2009, Pittsburgh, PA (2009).
13. W. Lim, J. Wright, B. P. Gila, J. L. Johnson, A. Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA (2008).
14. Y. Zhou, J. Johnson, L. Wu, S. Maley, A. Ural, and H. Xie, “Design and fabrication of microheaters for localized carbon nanotube growth,” Proceedings of the 8th IEEE Conference on Nanotechnology (NANO), 452 (2008).
15. Y. Choi, J. L. Johnson, and A. Ural, “GaN and Ga₂O₃ nanowire and nanoribbon growth from ion implanted Fe catalyst,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA (2008).
16. A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “Metal-Semiconductor-Metal (MSM) photodetectors with single-walled carbon nanotube film Schottky electrodes on GaAs,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA (2008).
17. J. Hicks, A. Behnam, and A. Ural, “Monte Carlo simulations of the effect of nanotube length distribution on the percolation resistivity in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA (2008).
18. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-Silicon Schottky contacts,” Proceedings of SPIE 6885, 68850A (2008).
19. J. Johnson, A. Behnam, Y. Choi, L. Noriega, G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, "Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts,” Materials Research Society Proceedings 1057E, 1057-II22-05 (2008).
20. A. Ural, A. Behnam, J. Johnson, and Y. Choi, “Percolation transport in single-walled carbon nanotube films: Experiment and Simulation,” Proceedings of SPIE 6769, 67690B (2007). (invited talk)
21. A. Behnam and A. Ural, “Electrical characterization and modeling of geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA (2007).
22. A. Behnam and A. Ural, “Geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, Denver, CO (2007).
23. Y. Choi and A. Ural, “Micromachined silicon grids for direct TEM and Raman characterization of CVD grown carbon nanotubes,” Proceedings of SPIE, 6464, 64640A (2007).
24. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and A. Ural, “Micromachined silicon grids for direct TEM characterization of carbon nanotubes grown by CVD,” Materials Research Society Proceedings 963E, 0963-Q20-13 (2007).
25. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and A. Ural, “Geometry dependent resistivity in single-walled carbon nanotube films patterned down to submicron dimensions,” Materials Research Society Proceedings 963E, 0963-Q10-55 (2007).
26. A. Ural, “Electrical properties of single-walled nanotube films,” Proceedings of SPIE 6370, 63700F (2006). (invited talk)
27. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and A. Ural, “Carbon nanotube growth from nanoscale clusters formed by ion implantation,” Materials Research Society Proceedings 908E, 0908-OO15-03 (2006).
28. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and A. Ural, “Carbon nanotube growth from ion-implanted catalyst by chemical vapor deposition” Proceedings of SPIE 6008, 600805 (2005).
29. A. Ural, “Electric field assisted growth and assembly of carbon nanotubes for nanoelectronics and nanosensing applications,” Proceedings of SPIE 5593, 28 (2004). (invited talk)
30. A. Nojeh, A. Ural, R. F. Pease, and H. Dai, "Electric-field-directed growth of carbon nanotubes in two dimensions," presented at the 48th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2004), San Diego, CA (2004).
31. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High k dielectrics for advanced carbon nanotube transistors and logic," presented at the American Physical Society (APS) March Meeting, Austin, TX (2003).
32. A. Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “Coupled diffusion of dopants,” presented at TECHCON 2000, Phoenix, AZ (2000).
33. A. Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “What does self-diffusion tell us about ultra shallow junctions?” Materials Research Society Proceedings 610, B4.11 (2000).
34. A. Ural, P. B. Griffin, and J. D. Plummer, “Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,” presented at the 20th International Conference on Defects in Semiconductors (ICDS- 20), Berkeley, CA (1999).
35. A. Ural, P. B. Griffin, and J. D. Plummer, “Experimental study of self-diffusion in silicon using isotopically enriched structures,” Materials Research Society Proceedings 568, 97 (1999).
36. P. B. Griffin and A. Ural, “Interactions between silicon self-diffusion and dopant diffusion,” presented at the Electrochemical Society Meeting, Seattle, WA (1999). (invited talk)
37. S. K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, M. C. Johnson, A. Ural, and P. B. Griffin, “Linking ab initio energetics to experiment: Kinetic Monte Carlo simulation of transient enhanced diffu­sion of B in Si,” Materials Research Society Proceedings 538, 291 (1998).

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