PUBLICATIONS AND PRESENTATIONS

Journal papers

  1. J. Hicks, A. Behnam, and A. Ural, “Resistivity in percolation networks of one dimensional elements with a length distribution,” accepted for publication in Physical Review E.

  2. A. Behnam, G. Bosman, and A. Ural, “"Percolation scaling of 1/f noise in single-walled carbon nanotube films,”" Physical Review B 78, 085431 (2008). PDF

  3. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and A. Ural, “"Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures,”" Applied Physics Letters 92, 243116 (2008).  PDF

  4. W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, A. Ural, T. Anderson, F. Ren, and S. J. Pearton, “"Room temperature hydrogen detection using Pd-coated GaN nanowires,"”Applied Physics Letters 93, 072109 (2008).  PDF

  5. J. L. Johnson, Y. Choi, and A. Ural, “ "GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst,”" Journal of Vacuum Science and Technology B 26, 1841 (2008).  PDF

  6. A. Behnam, J. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “"Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts,"” Journal of Applied Physics 103, 114315 (2008).  PDF

  7. J. L. Johnson, Y. Choi, A. Ural, W. Lim, J. S. Wright, B. P. Gila, F. Ren, and S. J. Pearton, “"Growth and characterization of GaN nanowires for hydrogen sensors,”" Journal of Electronic Materials (2008). PDF

  8. A. Behnam, J. Guo, and A. Ural, "Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films," Journal of Applied Physics 102, 044313 (2007). PDF

  9. A.Behnam, and A. Ural, “"Computational study of geometry-dependent resistivity scaling in single-walled carbon nanotube films”," Physical Review B 75, 125432 (2007).  PDF

  10. A. Behnam, Y. Choi, L. Noriega, Z.Wu, I. Kravchenko, A. G. Rinzler, and A. Ural, “"Nanolithographic patterning of transparent, conductive single-walled carbon nanotube films by inductively coupled plasma reactive ion etching”," Journal of Vacuum Science and Technology B 25, 348 (2007).    PDF

  11. Y. Choi, J. Sippel-Oakley, and A. Ural, “"Single-walledcarbon nanotube growth from ion implanted Fe catalyst,”" Applied Physics Letters 89, 153130 (2006).    PDF

  12. Y. Choi, J. Johnson, R. Moreau,E. Perozziello, and A. Ural, “"Micromachined silicon transmission electron microscopy grids for direct characterization of as-grown nanotubes,”" Nanotechnology 17, 4635 (2006).  PDF

  13. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and A. Ural,“"Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions,”" Applied Physics Letters 89, 093107 (2006).   PDF

  14. A. Nojeh, A. Ural, R.F. Pease, and H. Dai, "Electric-field-directed growth of carbon nanotubes in two dimensions," Journal of Vacuum Science & Technology B 22, 3421 (2004).    PDF

  15. Y. Li, D. Mann, M. Rolandi, W.Kim, A. Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishida, and H. Dai, “"Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method,”" Nano Letters 4, 317 (2004).    PDF

  16. A. Ural, Y. Li, and H. Dai, “"Electric-field-aligned growth of single-walled carbon  nanotubes on surfaces,"” Applied Physics Letters 81, 3464 (2002).   PDF

  17. A. Javey, H. Kim, M. Brink, Q.Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, “"High k dielectrics for advanced carbon nanotube transistors and logic,"” Nature Materials 1, 241 (2002).   PDF

  18. A. Javey, Q. Wang, A. Ural, Y. Li, and H. Dai, “"Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators,"” Nano Letters 2, 929 (2002).    PDF

  19. A. Ural, P. B. Griffin, and J. D. Plummer, “"Atomic-scale diffusion mechanisms via interme­diate species,”" Physical Review B 65, 134303 (2002).    PDF

  20. A. Ural, P. B. Griffin, and J. D. Plummer, “"Silicon self-diffusion under extrinsic conditions,”" Applied Physics Letters 79, 4328 (2001).    PDF

  21. A. Ural, P. B. Griffin, and J. D. Plummer, “"Ural, Griffin, and Plummer reply,"” Physical Review Letters 85, 4836 (2000).   PDF

  22. A. Ural, P. B. Griffin, and J. D. Plummer, “"Self-diffusion in silicon: Similarity between the properties of native point defects,"” Physical Review Letters 83, 3454 (1999).    PDF

  23. A. Ural, P. B. Griffin, and J. D. Plummer, “"Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon,"” Journal of Applied Physics 85, 6440 (1999).    PDF

  24. A. Ural, P. B. Griffin, and J. D. Plummer, “"Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,"” Physica B 273, 512 (1999).    PDF

  25. A. Ural, P. B. Griffin, and J. D. Plummer, “"Experimental evidence for a dual vacancy-inter­stitial mechanism of self-diffusion in silicon,”" Applied Physics Letters 73, 1706 (1998).    PDF

 

Conference Papers and Presentations

  1. W. Lim, J. Wright, B. P. Gila, J. L. Johnson, A. Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA (2008).

  2. Y. Zhou, J. Johnson, L. Wu, S. Maley, A. Ural, and H. Xie, “Design and fabrication of microheaters for localized carbon nanotube growth,” Proceedings of the 8th IEEE Conference on Nanotechnology (NANO), 452 (2008).

  3. Y. Choi, J. L. Johnson, and A. Ural, “GaN and Ga2O3 nanowire and nanoribbon growth from ion implanted Fe catalyst,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA (2008).

  4. A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “Metal-Semiconductor-Metal (MSM) photodetectors with single-walled carbon nanotube film Schottky electrodes on GaAs,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA (2008).

  5. J. Hicks, A. Behnam, and A. Ural, “Monte Carlo simulations of the effect of nanotube length distribution on the percolation resistivity in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA (2008).

  6. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, “Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-Silicon Schottky contacts,” Proceedings of SPIE 6885, 68850A (2008).

  7. J. Johnson, A. Behnam, Y. Choi, L. Noriega, G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and A. Ural, "Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts,” Materials Research Society Proceedings 1057E, 1057-II22-05 (2008).

  8. A. Ural, A. Behnam, J. Johnson, and Y. Choi, “Percolation transport in single-walled carbon nanotube films: Experiment and Simulation,” Proceedings of SPIE 6769, 67690B (2007). (invited talk)

  9. A. Behnam and A. Ural, “Electrical characterization and modeling of geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA (2007).

  10. A. Behnam and A. Ural, “Geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, Denver, CO (2007).

  11. Y. Choi and A. Ural, “Micromachined silicon grids for direct TEM and Raman characterization of CVD grown carbon nanotubes,” Proceedings of SPIE 6464, 64640A (2007).

  12. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and A. Ural, “Micromachined silicon grids for direct TEM characterization of carbon nanotubes grown by CVD,” Materials Research Society Proceedings 963E, 0963-Q20-13 (2007).

  13. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and A. Ural, “Geometry dependent resistivity in single-walled carbon nanotube films patterned down to submicron dimensions,” Materials Research Society Proceedings 963E, 0963-Q10-55 (2007).

  14. A. Ural, “Electrical properties of single-walled nanotube films,” Proceedings of SPIE 6370, 63700F (2006). (invited talk)

  15. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and A. Ural, “Carbon nanotube growth from nanoscale clusters formed by ion implantation,” Materials Research Society Proceedings 908E, 0908-OO15-03 (2006).

  16. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and A. Ural, “Carbon nanotube growth from ion-implanted catalyst by chemical vapor deposition” Proceedings of SPIE 6008, 600805 (2005).

  17. A. Ural, “Electric field assisted growth and assembly of carbon nanotubes for nanoelectronics and nanosensing applications,” Proceedings of SPIE 5593, 28 (2004). (invited talk)

  18. A. Nojeh, A. Ural, R. F. Pease, and H. Dai, "Electric-field-directed growth of carbon nanotubes in two dimensions," presented at the 48th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2004), San Diego, CA (2004).

  19. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, "High ? dielectrics for advanced carbon nanotube transistors and logic," presented at the American Physical Society (APS) March Meeting, Austin, TX (2003).

  20. A. Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “Coupled diffusion of dopants,” presented at TECHCON 2000, Phoenix, AZ (2000).

  21. A. Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “What does self-diffusion tell us about ultra shallow junctions?” Materials Research Society Proceedings 610, B4.11 (2000).

  22. A. Ural, P. B. Griffin, and J. D. Plummer, “Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,” presented at the 20th International Conference on Defects in Semiconductors (ICDS- 20), Berkeley, CA (1999).

  23. A. Ural, P. B. Griffin, and J. D. Plummer, “Experimental study of self-diffusion in silicon using isotopically enriched structures,” Materials Research Society Proceedings 568, 97 (1999).

  24. P. B. Griffin and A. Ural, “Interactions between silicon self-diffusion and dopant diffusion,” presented at the Electrochemical Society Meeting, Seattle, WA (1999). (invited talk)

  25. S. K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, M. C. Johnson, A. Ural, and P. B. Griffin, “Linking ab initio energetics to experiment: Kinetic Monte Carlo simulation of transient enhanced diffusion of B in Si,” Materials Research Society Proceedings 538, 291 (1998).

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